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Through-silicon via : ウィキペディア英語版 | Through-silicon via In electronic engineering, a through-silicon via (TSV) is a vertical electrical connection (via) passing completely through a silicon wafer or die. TSVs are a high performance interconnect technique used as an alternative to wire-bond and flip chips to create 3D packages and 3D integrated circuits, compared to alternatives such as package-on-package, because the density of the vias is substantially higher, and because the length of the connections is shorter. ==Image sensors== CMOS image sensors were among the first applications to adopt TSV(s) in volume manufacturing. In initial CIS applications, TSVs were formed on the backside of the image sensor wafer to form interconnects, eliminate wire bonds, and allow for reduced form factor and higher-density interconnects. Chip stacking only came about with the advent of backside illuminated (BSI) CIS, and involved reversing the order of the lens, circuitry, and photodiode from traditional front-side illumination so that the light coming through the lens first hits the photodiode and then the circuitry. This was accomplished by flipping the photodiode wafer, thinning the backside, and then bonding it on top of the readout layer using a direct oxide bond, with TSVs as interconnects around the perimeter.〔F. von Trapp, The Future Of Image Sensors is Chip Stacking http://www.3dincites.com/2014/09/future-image-sensors-chip-stacking〕
抄文引用元・出典: フリー百科事典『 ウィキペディア(Wikipedia)』 ■ウィキペディアで「Through-silicon via」の詳細全文を読む
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